2N6668 ON Semiconductor, 2N6668 Datasheet - Page 3

• Manufacturer Part Number: 2N6668
• Description: Darlington Transistors 10A 80V Bipolar
• Manufacturer: ON Semiconductor

Specifications of 2N6668

• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 100, 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

R
D
FOR t
t
DUTY CYCLE = 1.0%
r
, t
B
1
, MUST BE FAST RECOVERY TYPES e.g.,
1N5825 USED ABOVE I
MSD6100 USED BELOW I
T
f
0.05
0.03
0.02
0.01
& R
4
3
2
1
v 10 ns
A
0.5
0.3
0.2
0.1
d
1
0.01
C
AND t
80
60
40
20
T
VARIED TO OBTAIN DESIRED CURRENT LEVELS
0
C
0
D = 0.5
r
, D
0.02
0.05
0.02
0.01
1
0.2
0.1
IS DISCONNECTED AND V
20
B
40
Figure 3. Power Derating
0.05
[ 100 mA
B
[ 100 mA
T
T, TEMPERATURE (°C)
A
60
SINGLE PULSE
0.1
T
C
80
2
0.2
= 0
Figure 2. Switching Times Test Circuit
100
0.5
120
Figure 5. Thermal Response
APPROX
APPROX
2N6667, 2N6668
- 12 V
+ 8 V
http://onsemi.com
V
V
1
2
1
140
0
160
2
t, TIME (ms)
3
25 μs
P
0.7
0.5
0.3
0.2
0.1
10
5
(pk)
7
5
3
2
1
0.1
DUTY CYCLE, D = t
t
1
10
t
0.2
2
t
r
Figure 4. Typical Switching Times
t
20
f
51
0.3
I
C
, COLLECTOR CURRENT (AMPS)
1
R
/t
2
D
B
0.5
+ 4.0 V
1
50
0.7
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
θJC
J(pk)
θJC
(t) = r(t) R
= 1.92°C/W MAX
1
- T
100
[ 8 k
t
s
C
= P
θJC
(pk)
200
2
TUT
1
[ 120
.t
V
I
I
T
R
C
B1
d
J
CC
θJC
/I
= 25°C
B
3
= I
= 30 V
(t)
= 250
- 30 V
B2
V
CC
500
R
5
C
SCOPE
7
1000
10