2N6668 ON Semiconductor, 2N6668 Datasheet
2N6668
Specifications of 2N6668
Available stocks
Related parts for 2N6668
2N6668 Summary of contents
Page 1
... High DC Current Gain - h = 3500 (Typ 4.0 Adc FE C • Collector-Emitter Sustaining Voltage - @ 200 mAdc Vdc (Min) - 2N6667 CEO(sus Vdc (Min) - 2N6668 • Low Collector-Emitter Saturation Voltage - V = 2.0 Vdc (Max 5.0 Adc CE(sat) C • Monolithic Construction with Built-In Base-Emitter Shunt Resistors • ...
Page 2
... Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2N6667, 2N6668 Î Î Î Î Î Î Î Î Î Î ...
Page 3
... T, TEMPERATURE (°C) Figure 3. Power Derating 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.05 0.03 0.02 SINGLE PULSE 0.02 0.01 0.01 0.01 0.02 0.05 0.1 0.2 2N6667, 2N6668 V 2 APPROX + APPROX 25 μ Figure 2. Switching Times Test Circuit 0.7 0.5 0.3 0.2 0.1 ...
Page 4
... I , COLLECTOR CURRENT (AMPS) C Figure 9. Typical DC Current Gain 2N6667, 2N6668 100 μs There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate limits of the transistor that must be observed for reliable operation ...
Page 5
... B 1 CE(sat) C 0.5 0.1 0.2 0.3 0.5 0 COLLECTOR CURRENT (AMPS) C Figure 11. Typical “On” Voltages 0.6 Figure 13. Typical Collector Cut-Off Region 2N6667, 2N6668 + ≤ ∗θ θ for 250 0.1 0.2 0 Figure 12. Typical Temperature Coefficients REVERSE FORWARD 150°C J 100°C 25° ...
Page 6
... PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com 2N6667, 2N6668 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE SEATING -T- PLANE ...