50MT060WHTAPBF Vishay, 50MT060WHTAPBF Datasheet - Page 4

• Manufacturer Part Number: 50MT060WHTAPBF
• Description: Bridge Rectifiers 600 Volt 50 Amp Half Bridge
• Manufacturer: Vishay

Specifications of 50MT060WHTAPBF

• Package / Case: MTP
• Maximum Operating Temperature: + 150 C
• Length: 63.5 mm
• Width: 33 mm
• Height: 16 mm
• Mounting Style: Screw
• Minimum Operating Temperature: - 40 C
• Power Dissipation Pd: 658W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 114A
• Leaded Process Compatible: Yes
• Collector Emitter Saturation Voltage Vce(sat): 3.2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

50MT060WHTAPbF
Vishay High Power Products
www.vishay.com
4
94468_03
94468_04
94468_05
100
3.0
2.0
1.0
2.5
1.5
16
20
12
10
8
4
0
1
0.4
20
Fig. 3 - Typical Collector to Emitter Voltage vs.
0
Fig. 5 - Maximum Forward Voltage Drop vs.
V
I
C
CC
= 52 A
= 400 V
40
T
V
O
Fig. 4 - Typical Gate Charge vs.
Instantaneous Forward Current
FM
J
0.8
G
- Junction Temperature (°C)
100
- Typical Gate Charge (nC)
- Forward Voltage Drop (V)
Gate to Emitter Votlage
Junction Temperature
60
1.2
80
200
100
T
T
T
I
I
I
C
C
C
J
J
J
1.6
= 20 A
= 100 A
= 50 A
= 150 °C
= 125 °C
= 25 °C
120
For technical questions, contact:
300
2.0
140
(Warp Speed IGBT), 114 A
"Half Bridge" IGBT MTP
160
400
2.4
94468_08
94468_07
94468_06
[e-mail]
2000
1500
1000
500
160
140
120
100
100
80
60
10
Fig. 7 - Typical Reverse Recovery Current vs. dI
0
Fig. 6 - Typical Reverse Recovery Time vs. dI
1
100
100
100
V
V
Fig. 8 - Typical Stored Charge vs. dI
R
R
I
= 200 V
= 200 V
F
= 50 A, T
I
F
V
= 50 A, T
R
= 200 V
I
F
= 50 A, T
J
= 125 °C
dI
dI
dI
J
I
F
= 125 °C
F
F
F
I
I
F
= 50 A, T
F
/dt (A/µs)
/dt (A/µs)
/dt (A/μs)
= 50 A, T
= 50 A, T
J
= 25 °C
J
J
= 125 °C
J
= 25 °C
Document Number: 94468
= 25 °C
Revision: 01-Mar-10
F
/dt
1000
1000
1000
F
/dt
F
/dt