50MT060WHTAPBF Vishay, 50MT060WHTAPBF Datasheet - Page 2

• Manufacturer Part Number: 50MT060WHTAPBF
• Description: Bridge Rectifiers 600 Volt 50 Amp Half Bridge
• Manufacturer: Vishay

Specifications of 50MT060WHTAPBF

• Package / Case: MTP
• Maximum Operating Temperature: + 150 C
• Length: 63.5 mm
• Width: 33 mm
• Height: 16 mm
• Mounting Style: Screw
• Minimum Operating Temperature: - 40 C
• Power Dissipation Pd: 658W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 114A
• Leaded Process Compatible: Yes
• Collector Emitter Saturation Voltage Vce(sat): 3.2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

50MT060WHTAPbF
Vishay High Power Products
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leaking current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
For technical questions, contact:
SYMBOL
SYMBOL
V
V
V
(BR)CES
C
I
C
C
CE(on)
I
V
Q
Q
E
E
E
E
GE(th)
E
E
Q
Q
CES
GES
Q
t
I
t
I
oes
FM
on
off
on
off
ies
res
rr
rr
rr
rr
ge
gc
ts
ts
rr
rr
g
J
J
(Warp Speed IGBT), 114 A
= 25 °C unless otherwise specified)
"Half Bridge" IGBT MTP
= 25 °C unless otherwise specified)
I
V
V
Internal gate resistors (see electrical diagram)
I
Energy losses include tail and diode reverse
recovery, T
Internal gate resistors (see electrical diagram)
I
Energy losses include tail and diode reverse
recovery, T
V
V
f = 1.0 MHz
V
dI/dt = 200 A/μs
V
dI/dt = 200 A/μs
T
V
V
V
V
I
V
V
I
I
I
V
C
C
C
C
F
F
F
J
CC
GE
GE
CC
CC
CC
GE
GE
GE
GE
GE
GE
GE
= 50 A, V
= 50 A, V
= 100 A, V
= 52 A
= 50 A, V
= 50 A, V
= 0.5 mA
= 125 °C
= 15 V
= 0 V
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 0 V, I
= 0 V, I
= ± 20 V
= 400 V
= 30 V
= 200 V, I
= 200 V, I
CC
J
CC
J
C
C
C
GE
GE
TEST CONDITIONS
TEST CONDITIONS
= 25 °C
= 150 °C
C
C
C
GE
= 500 μA
= 600 A
= 600 A, T
C
C
= 480 V, V
= 480 V, V
= 0 V
= 0 V, T
= 50 A
= 100 A
= 50 A, T
= 0 V, T
= 50 A
= 50 A
[e-mail]
J
J
J
J
= 150 °C
GE
GE
= 25 °C
= 150 °C
= 150 °C
= 15 V, L = 200 μH
= 15 V, L = 200 μH
MIN.
MIN.
600
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
7100
TYP.
1.72
1.58
1.49
0.26
1.46
0.73
1.66
2.39
12.7
331
133
510
140
340
137
870
2.3
2.5
1.9
1.2
8.3
44
82
Document Number: 94468
-
-
-
-
-
Revision: 01-Mar-10
MAX.
MAX.
± 250
1132
10.6
14.8
3.15
2.17
1.80
1.68
2.17
385
176
514
153
3.2
0.4
10
52
97
6
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
mA
nC
mJ
mJ
nC
nC
nA
pF
ns
ns
A
A
V
V
V