50MT060WH Vishay, 50MT060WH Datasheet

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50MT060WH

Manufacturer Part Number
50MT060WH
Description
IGBT WARP 600V 114A MTP
Manufacturer
Vishay
Datasheet

Specifications of 50MT060WH

Igbt Type
PT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 100A
Current - Collector (ic) (max)
114A
Current - Collector Cutoff (max)
400µA
Input Capacitance (cies) @ Vce
7.1nF @ 30V
Power - Max
658W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
12-MTP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*50MT060WH
VS-50MT060WH
VS-50MT060WH
VS50MT060WH
VS50MT060WH
"HALF-BRIDGE" IGBT MTP
www.irf.com
• Gen. 4 Warp Speed IGBT Technology
• HEXFRED
• Very Low Conduction and Switching Losses
• Optional SMT Thermistor (NTC)
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
• Optimized for Welding, UPS and SMPS
• Operating Frequencies > 20 kHz Hard
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Absolute Maximum Ratings
Features
Benefits
V
I
I
I
I
I
V
V
P
C
CM
LM
FM
UltraSoft Reverse Recovery
High Speed Operation
UL E78996 approved
Applications
Switching,>200 kHz Resonant Mode
Resistance
F
CES
GE
ISOL
D
Parameters
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
TM
Antiparallel Diodes with
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 25°C
= 109°C
= 109°C
= 25°C
= 100°C
MMTP
Max
2500
± 20
600
114
350
350
200
658
263
50
34
Warp Speed IGBT
50MT060WH
V
V
CE(on) typ.
GE
I27120 rev. D 02/03
V
= 15V, I
T
CES
C
= 25°C
= 600V
= 2.3V @
C
Units
= 50A
W
V
A
V
1

Related parts for 50MT060WH

50MT060WH Summary of contents

Page 1

... Diode Continuous Forward Current F I Peak Diode Forward Current FM V Gate-to-Emitter Voltage GE V RMS Isolation Voltage, Any Terminal to Case min ISOL P Maximum Power Dissipation D www.irf.com I27120 rev. D 02/03 50MT060WH Warp Speed IGBT V CES V CE(on) typ 15V MMTP Max 600 @ T = 25°C 114 ...

Page 2

... I27120 rev. D 02/03 Electrical Characteristics @ T Parameters V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) I Collector-to-Emiter Leaking CES Current V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current GES Switching Characteristics @ T Parameters Q Total Gate Charge (turn-on Gate-Emitter Charge (turn-on) ...

Page 3

... Fig Typical Output Characteristics www.irf.com Min Typ IGBT, Diode - 40 Thermistor - IGBT Diode Module 0.06 5 (4) 3 ± 10% 120 100 Fig Maximum Collector Current vs. Case 50MT060WH I27120 rev. D 02/03 Max Units 150 °C 125 125 0.38 ° 100 125 T , Case Temperature (°C) C Temperature 150 3 ...

Page 4

... I27120 rev. D 02/ 100A 50A 20A 100 120 140 160 T , Junction Temperature (°C) J Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 100 10 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 4 20 Vcc = 400V 150˚ 125˚ 25˚ 0.4 0.8 1 ...

Page 5

... Vr = 200V 10 1 1000 100 /dt Fig Typical Reverse Recovery Current vs 200V I = 50A 125˚ 50A 25˚ /dt - (A/µs) f Fig Typical Stored Charge vs. di /dt f 50MT060WH I27120 rev. D 02/ 50A 125˚ 50A 25˚C F 1000 di /dt - (A/µs) f 1000 / ...

Page 6

... I27120 rev. D 02/03 Outline Table Note: unused terminals are not assembled in the package 6 Functional Diagram Electrical DHiagram Electrical Diagram Resistance in ohms Dimensions in millimetres www.irf.com ...

Page 7

... Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. Visit us at www.irf.com for sales contact information. 10/02 50MT060WH I27120 rev. D 02/03 = Thermistor TAC Fax: (310) 252-7309 ...

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