HT1MO2S3E3M-T NXP Semiconductors, HT1MO2S3E3M-T Datasheet - Page 10

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HT1MO2S3E3M-T

Manufacturer Part Number
HT1MO2S3E3M-T
Description
RFID Modules & Development Tools HITAG 1 MOA2 MODULE
Manufacturer
NXP Semiconductors
Datasheet

Specifications of HT1MO2S3E3M-T

Operating Current
30 mA
Operating Voltage
3.1 V to 4.2 V
Product
RFID Transponders
Wireless Frequency
125 KHz
Dimensions
7.55 mm x 11.75 mm x 0.45 mm
Operating Temperature Range
- 25 C to + 85 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
HT1MOA2S30/E/3,118
4 Coil Specifications
The HITAG 1 chip module has to be connected to a coil whose parameters are briefly described
in the following.
Equivalent circuit of the transponder
U
f
X
R
C
C
R
f
L
L
C
R
f
Note: The parasitic capacitance of the package (C
Typical values for C
hot laminated cards:
moulded tags:
Ht1moa3.doc/HS
Specifications of the HT1 MOA3 S30
f
res
resc
resc
res
pc
pc
pc
p
chip
chip
chip
pc
c
pc
2
Xpc
(C
...
...
...
...
...
...
...
...
=
=
=
>
>
chip
1
C ).L
p
p
voltage at the connection pads
resonant frequency of the transponder
parallel reactance of the coil (f = 125 kHz)
parallel resistance of the coil (f = 125 kHz)
parasitic capacitance of the package
capacitance of the chip (U
resistance of the chip
self resonant frequency of the coil
X
7.72 mH x % (C
210 pF ± 10 %
45 k
750 kHz
pc
Rpc
pc
C
C
/2 f (f = 125 kHz)
[
p
p
= 1.5 pF
= 6.0 pF
125 kHz
Cp
Page 10 of 24
p
= 0, x depends on the coil production process)
Rev. 1.1
L =
pc
c
> 4 Vpp)
2 f
p
) must be considered.
res
Uc
2
C
1
chip
Cchip
+ C
p
Rchip
1997-08-19

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