SFH 3600-2/3-Z OSRAM Opto Semiconductors Inc, SFH 3600-2/3-Z Datasheet - Page 5

• Manufacturer Part Number: SFH 3600-2/3-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of SFH 3600-2/3-Z

• Maximum Power Dissipation: 130 mW
• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 35 V
• Fall Time: 30 us, 45 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 30 us, 45 us
• Package / Case: MIDLED
• Phototransistor Type: Phototransistor
• Number Of Elements: 1
• Emitter-collector Voltage (max): 7V
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 15mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 50nA
• Light Current: 200/320uA
• Power Dissipation: 130mW
• Peak Wavelength: 990nm
• Half-intensity Angle: 40deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: MIDLED
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2665

Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse
package
Anschlussbelegung
Pin configuration
1)
1)
2007-04-03
Verarbeitungshinweis:
Handling indication:
Das Gehäuse ist mit Silikon vergossen. Mechanischer Streß auf der Bauteiloberfläche sollte so gering wie
möglich gehalten werden.
The package is casted with silicone. Mechanical stress at the surface of the unit should be as low as
possible.
metallisation
1)
Device casted with silicone.
Avoid mechanical stress on silicone surface.
Pad 1
(1.2)
MID mit klarem Silikonverguss
MID casted with clear Silicone
Pad 1 = Kollektor / collector
Pad 2 = Emitter / emitter
Silicone area
Isolating area
Pad 2
metallisation
1)
1.7
1.5
5
(0.8)
metallisation
SFH 3600, SFH 3605
0.75
0.55
Backside
0.42
3.3
2.9
OHF02956
0.42
0.75
0.55