SFH 3600-2/3-Z OSRAM Opto Semiconductors Inc, SFH 3600-2/3-Z Datasheet - Page 4

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SFH 3600-2/3-Z

Manufacturer Part Number
SFH 3600-2/3-Z
Description
Photodetector Transistors PHOTOTRANSISTOR
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of SFH 3600-2/3-Z

Maximum Power Dissipation
130 mW
Maximum Dark Current
50 nA
Collector- Emitter Voltage Vceo Max
35 V
Fall Time
30 us, 45 us
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Rise Time
30 us, 45 us
Package / Case
MIDLED
Phototransistor Type
Phototransistor
Number Of Elements
1
Emitter-collector Voltage (max)
7V
Collector-emitter Voltage
35V
Collector Current (dc) (max)
15mA
Collector-emitter Sat Volt (max)
0.15V
Dark Current (max)
50nA
Light Current
200/320uA
Power Dissipation
130mW
Peak Wavelength
990nm
Half-intensity Angle
40deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
2
Package Type
MIDLED
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A2665
Directional Characteristics
S
Rel. Spectral Sensitivity,
S
Photocurrent
V
2007-04-03
Ι
S
rel
rel
Ι
PCE
CE
rel
PCE
100
25
=
=
80
70
60
50
40
30
20
10
100˚
%
= 5 V, normalized to 25 °C
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
50˚
60˚
70˚
80˚
90˚
400
f
f
0
-25
(ϕ)
(λ), axial direction
500 600 700 800 900
1.0
40˚
0
I
PCE
0.8
25
=
30˚
f
0.6
50
(
T
A
),
OHF02405
20˚
λ
75
nm 1100
0.4
OHF01524
T
A
C
10˚
100
0.8
1.0
0.6
0.4
0.2
0
Dark Current
I
Collector-Emitter Capacitance
C
CEO
C
I
CE
R
CE
20˚
10
10
10
10
nA
=
3.0
2.5
2.0
1.5
1.0
0.5
=
pF
-1
-2
1
0
0
10
0
f
f
(
-2
40˚
(
V
V
CE
CE
5
),
),
10
60˚
f
-1
E = 0
10
= 1 MHz
4
80˚
15
10
0
100˚
20
OHF02432
10
1
OHF02420
OHF00592
25
120˚
V
V
R
CE
V
V
10
30
2
Dark Current
I
CEO
Ι
CEO
10
10
10
10
nA
10
=
1
0
-1
SFH 3600, SFH 3605
3
2
0
f
(
T
A
),
20
V
CE
40
= 20 V,
60
E = 0
80
OHF00380
T
A
˚C
100

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