SI5975DC-T1-E3 Vishay, SI5975DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5975DC-T1-E3
• Description: MOSFET DUAL P-CH 12V 3.1 CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5975DC-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 450mV @ 1mA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si5975DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71320.
www.vishay.com
4
- 0.05
- 0.15
0.25
0.15
0.05
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.05
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0
I
Single Pulse
D
Threshold Voltage
= 1 mA
T
J
- Temperature (
25
10
-3
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
°C)
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
50
40
30
20
10
10
1
0
10
-1
-4
10
-3
10
10
-2
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
10
- T
-1
Time (s)
1
A
t
1
= P
S10-0936-Rev. C, 19-Apr-10
t
2
Document Number: 71320
DM
Z
1
thJA
100
thJA
t
t
1
2
(t)
= 90 °C/W
10
100
600
10
600