SI5975DC-T1-E3 Vishay, SI5975DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5975DC-T1-E3
• Description: MOSFET DUAL P-CH 12V 3.1 CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5975DC-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 450mV @ 1mA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71320
S10-0936-Rev. C, 19-Apr-10
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
V
I
D
GS
DS
0.2
Source-Drain Diode Forward Voltage
= 3.1 A
On-Resistance vs. Drain Current
= 1.8 V
= 6 V
1
2
V
0.4
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
I
2
= 150
- Total Gate Charge (nC)
D
Gate Charge
0.6
- Drain Current (A)
4
°C
V
GS
0.8
3
= 2.5 V
T
6
1.0
J
= 25
4
V
1.2
°C
GS
8
= 4.5 V
5
1.4
1.6
10
6
1000
0.25
0.20
0.15
0.10
0.05
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
C
GS
= 3.1 A
rss
= 4.5 V
1
V
V
3
0
GS
DS
T
J
- Junction Temperature (
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
oss
iss
25
Capacitance
2
50
I
6
D
Vishay Siliconix
= 3.1 A
3
75
Si5975DC
www.vishay.com
100
°C)
9
4
125
150
12
5
3