SI5975DC-T1 Vishay Intertechnology, SI5975DC-T1 Datasheet
SI5975DC-T1
Related parts for SI5975DC-T1
SI5975DC-T1 Summary of contents
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... Bottom View Ordering Information: Si5975DC-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...
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... Si5975DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... J 1 0.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) SD Document Number: 71320 S-21251—Rev. B, 05-Aug-02 1000 0.25 0.20 0.15 0.10 0. 25_C J 0.00 1.2 1.4 1.6 Si5975DC Vishay Siliconix Capacitance 800 C iss 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.4 1.2 1.0 0.8 0.6 --50 ...
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... Si5975DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.25 0. 0.05 --0.05 --0.15 --50 -- Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...