SI4276DY-T1-E3 Vishay, SI4276DY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4276DY-T1-E3
• Description: MOSFET 2N-CH 30V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4276DY-T1-E3

• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Power - Max: 3.6W, 2.8W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 66599
S10-1289-Rev. A, 31-May-10
100
2.1
1.9
1.7
1.5
1.3
1.1
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
V
0.3
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
T
I
J
D
0.6
= 150 °C
50
= 250 μA
75
0.01
100
0.1
10
1
0.1
100
0.9
T
* V
Safe Operating Area, Junction-to-Ambient
J
= 25 °C
GS
Single Pulse
125
T
Limited by R
A
> minimum V
= 25 °C
V
DS
150
1.2
- Drain-to-Source Voltage (V)
1
DS(on)
GS
at which R
*
BVDSS Limited
DS(on)
0.060
0.045
0.030
0.015
10
50
40
30
20
10
0
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
I
Single Pulse Power, Junction-to-Ambient
D
100 μs
1 ms
10 ms
100 ms
1 s
10 s
DC
= 6.8 A
0.01
2
V
100
GS
T
- Gate-to-Source Voltage (V)
J
0.1
= 25 °C
4
Time (s)
1
Vishay Siliconix
6
10
Si4276DY
T
www.vishay.com
J
= 125 °C
8
100
1000
10
9