SI4276DY-T1-E3 Vishay, SI4276DY-T1-E3 Datasheet - Page 10

• Manufacturer Part Number: SI4276DY-T1-E3
• Description: MOSFET 2N-CH 30V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4276DY-T1-E3

• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Power - Max: 3.6W, 2.8W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4276DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
4
3
2
1
0
0
25
Power Derating, Junction-to-Foot
D
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
10
100
8
6
4
2
0
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
Package Limited
125
25
T
C
150
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
S10-1289-Rev. A, 31-May-10
Document Number: 66599
100
125
150