SI4276DY-T1-GE3 Vishay
SI4276DY-T1-GE3
Manufacturer Part Number
SI4276DY-T1-GE3
Description
Dual N-Ch MOSFET SO-8 30 V 15.3 - 28 Mohm @10V
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4276DY-T1-GE3
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15.3 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 15V
Power - Max
3.6W, 2.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4276DY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4276DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
12 500