ZXMC3AMCTA Diodes Zetex, ZXMC3AMCTA Datasheet - Page 7

• Manufacturer Part Number: ZXMC3AMCTA
• Description: MOSFET N+P 30V 2.9A/2.1A DFN
• Manufacturer: Diodes Zetex

Specifications of ZXMC3AMCTA

• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC3AMCTATR

Electrical Characteristics – Q2 P-Channel
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 13)
Forward Transconductance (Note 13 & 14)
Diode Forward Voltage (Note 13)
Reverse Recover Time (Note 14)
Reverse Recover Charge (Note 14)
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 15)
Total Gate Charge (Note 15)
Gate-Source Charge (Note 15)
Gate-Drain Charge (Note 15)
Turn-On Delay Time (Note 15)
Turn-On Rise Time (Note 15)
Turn-Off Delay Time (Note 15)
Turn-Off Fall Time (Note 15)
Notes:
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
13. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
14. For design aid only, not subject to production testing.
15. Switching characteristics are independent of operating junction temperature.
Characteristic
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
Q
g
Q
Q
t
@T
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
A
7 of 11
= 25°C unless otherwise specified
Min
-1.0
-30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.150
0.280
-0.85
2.48
18.6
14.8
59.3
49.2
0.69
11.3
Typ
206
3.8
6.4
2.0
1.5
2.8
7.5
-
-
-
-
0.210
0.330
±100
-0.95
Max
-0.5
-3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated
A Product Line of
Unit
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
V
I
V
V
I
V
V
V
I
I
V
f = 1.0MHz
V
V
V
V
D
D
S
S
DS
GS
GS
GS
DS
DS
GS
GS
DS
GS
= -0.95A, di/dt = 100A/µs
= -250μA, V
= -250μA, V
= -1.1A, V
= -30V, V
= ±20V, V
= -10V, I
= -4.5V, I
= -15V, I
= -15V, V
= -4.5V
= -10V
= -15V, I
= -10V, R
Test Condition
ZXMC3AMC
GS
D
D
D
D
GS
GS
G
GS
DS
DS
= -1.4A
= -1.4A
= -1A
= 0V
= -1.1A
= 6Ω
© Diodes Incorporated
V
I
= 0V
= 0V,
December 2010
= 0V
= V
= 0V
D
DS
= -1.4A
GS
= -15V