ZXMC3AMCTA Diodes Zetex, ZXMC3AMCTA Datasheet

no-image

ZXMC3AMCTA

Manufacturer Part Number
ZXMC3AMCTA
Description
MOSFET N+P 30V 2.9A/2.1A DFN
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMC3AMCTA

Input Capacitance (ciss) @ Vds
190pF @ 25V
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.9A, 2.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3.9nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-VDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMC3AMCTATR
Ordering Information
Marking Information
Product Summary
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
ideal for high efficiency power management applications.
Notes:
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
Device
DS(on)
Top View
Q1
Q2
MOSFET gate drive
LCD backlight inverters
Motor control
Portable applications
ZXMC3AMCTA
Part Number
) and yet maintain superior switching performance, making it
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
V
(BR)DSS
-30V
30V
DFN3020B-8
330mΩ @ V
210mΩ @ V
180mΩ @ V
120mΩ @ V
Bottom View
R
DS(on)
(Note 3)
GS
GS
max
GS
GS
Marking
C01
= -4.5V
= 4.5V
= -10V
= 10V
T
(Notes 4 & 7)
C01
I
A
D
-2.7A
-2.2A
3.7A
3.0A
= 25°C
max
D2
G2
30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Reel size (inches)
www.diodes.com
D2
Bottom View
D2
S2
1 of 11
Pin-Out
C01 = Product Type Marking Code
Top view, Dot Denotes Pin 1
7
Features and Benefits
Mechanical Data
G1
D1
D1
Low profile package, for thin applications
Low R
6mm
Low on-resistance
Fast switching speed
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: DFN3020B-8
Terminals: Pre-Plated NiPdAu leadframe
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
S1
D1
2
θJA
footprint, 50% smaller than TSOP6 and SOT23-6
Pin 1
, thermally efficient package
Tape width (mm)
Diodes Incorporated
G1
A Product Line of
8
Q1 N-Channel
D1
S1
Equivalent Circuit
G2
Quantity per reel
ZXMC3AMC
Q2 P-Channel
© Diodes Incorporated
3000
December 2010
D2
S2

Related parts for ZXMC3AMCTA

ZXMC3AMCTA Summary of contents

Page 1

... Portable applications DFN3020B-8 Top View Bottom View Ordering Information (Note 3) Part Number Marking ZXMC3AMCTA C01 Notes purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details our website at http://www.diodes.com. Marking Information ZXMC3AMC Document number: DS35088 Rev ...

Page 2

Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current V = 10V GS Pulsed Drain Current V = 10V GS Continuous Source Current (Body diode) Pulse Source Current (Body diode) Thermal Characteristics ...

Page 3

Thermal Characteristics R 10 DS(ON) Limited 100ms 100m 10ms 2oz Cu One active die Single Pulse, T =25°C 10m amb 1 V Drain-Source Voltage (V) DS N-channel Safe Operating Area ...

Page 4

Electrical Characteristics – Q1 N-Channel Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 10) Forward Transconductance (Note 10 & 11) Diode Forward Voltage (Note 10) Reverse ...

Page 5

Typical Electrical Characteristics – Q1 N-Channel T = 25°C 10V 10 1 0.1 0.1 V Drain-Source Voltage (V) DS Output Characteristics 10V 150° 25°C 0.1 2.0 2.5 3.0 V Gate-Source Voltage ...

Page 6

Typical Electrical Characteristics – Q1 N-Channel - Continued 300 250 200 150 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits Charge ...

Page 7

Electrical Characteristics – Q2 P-Channel Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 13) Forward Transconductance (Note 13 & 14) Diode Forward Voltage (Note 13) Reverse ...

Page 8

Typical Electrical Characteristics – Q2 P-Channel T = 25° 0.1 0.01 0.1 -V Drain-Source Voltage (V) DS Output Characteristics -V = 10V 150° 25°C 0.1 1.5 2.0 2.5 -V Gate-Source Voltage (V) ...

Page 9

Typical Electrical Characteristics – Q2 P-Channel - Continued 350 300 250 C OSS 200 150 100 C RSS Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits ...

Page 10

Package Outline Dimensions Suggested Pad Layout ZXMC3AMC Document number: DS35088 Rev Dim ...

Page 11

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY ...

Related keywords