ZXMC3AMCTA Diodes Zetex, ZXMC3AMCTA Datasheet - Page 3

• Manufacturer Part Number: ZXMC3AMCTA
• Description: MOSFET N+P 30V 2.9A/2.1A DFN
• Manufacturer: Diodes Zetex

Specifications of ZXMC3AMCTA

• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC3AMCTATR

Thermal Characteristics
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
100m
10m
Power Dissipation v Board Area
Transient Thermal Impedance
N-channel Safe Operating Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
90
80
60
40
20
100µ
1
0
0.1
8 sq cm 2oz Cu
One active die
T
T
Continuous
8 sq cm 2oz Cu
One active die
Single Pulse, T
D=0.5
D=0.2
DC
amb
j max
V
R
Limited
DS(ON)
1m
DS
=25°C
=150°C
2oz Cu
One active die
1s
Drain-Source Voltage (V)
100ms
Board Cu Area (sqcm)
1
10m 100m
amb
Pulse Width (s)
1
=25°C
10ms
1oz Cu
One active die
2oz Cu
2oz Cu
Two active die
Two active die
1ms
D=0.1
1
D=0.05
100us
Single Pulse
10
10
10
1oz Cu
Two active die
100
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Thermal Resistance v Board Area
100m
10m
225
200
175
150
125
100
2.0
1.5
1.0
0.5
0.0
75
50
25
10
0
1
0.1
P-channel Safe Operating Area
0
8 sq cm 2oz Cu
One active die
Single Pulse, T
-V
DC 1s
2oz Cu
One active die
R
Limited
DS
25
DS(ON)
100ms
Drain-Source Voltage (V)
Board Cu Area (sqcm)
Derating Curve
1
Diodes Incorporated
Temperature (°C)
50
amb
1
A Product Line of
=25°C
1oz Cu
One active die
10ms
10 sq cm 1oz Cu
Two active die
2oz Cu
Two active die
75
8 sq cm 2oz Cu
One active die
1ms
100
10 sq cm 1oz Cu
One active die
100us
10
10
1oz Cu
Two active die
125
ZXMC3AMC
150
© Diodes Incorporated
December 2010
100