P5DF081X0T1AD2060S NXP Semiconductors, P5DF081X0T1AD2060S Datasheet - Page 29
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P5DF081X0T1AD2060S
Manufacturer Part Number
P5DF081X0T1AD2060S
Description
IC SAM MIFARE 8PLLCC
Manufacturer
NXP Semiconductors
Datasheet
1.P5DF081HNT1AD2060.pdf
(36 pages)
Specifications of P5DF081X0T1AD2060S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
P5DF081_SDS
Objective short data sheet
PUBLIC
Table 21.
Acronym
FSDI
FWI
INS
ISO
IV
KeyCompMeth
KeyNo
KeyNoCEK
KeyNoCKUC
KeyNoM
KeyV
KeyVa
KeyVb
KeyVc
KeyVCEK
KeyVCKUC
KeyVM
KST
KST
KUC
LC
LFI
LoadReg
LRC
LSB
MAC
MAD
MFP
MGF
MSB
NumCards
OAEP
PCD
PICC
PKI
PKI_KST
PPS
ProMas
PSS
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Frame Size for Device Integer
Frame Waiting time Integer
INStruction code
International Organization for Standardization
Initial Vector (input parameter to some block cipher modes)
Key Compilation Method
Key Reference Number
Key Reference Number of Change Entry Key
Key Reference Number to change the current KUC Entry
Key Reference Number of MIFARE Key
Key Version
Key (Version a)
Key (Version b)
Key (Version c)
Key Version of Change Entry Key
Key Version to change the current KUC Entry
Key Version of MIFARE Key
Key Storage Table (the place where the SAM stores the symmetric keys and
their configuration)
Key Storage Table
Key Usage Counter
Logical Channel (the ISO-7816 concept)
Last Frame Indicator
Number of Register Value Set to be loaded
Longitudinal Redundancy Check
Least Significant Byte
Message Authentication Code
MIFARE Application Directory
MIFARE Plus
Mask Generation Function
Most Significant Byte
Number of Cards
Optimal Asymmetric Encryption Padding
Proximity Coupling Device
Proximity Integrated Circuit Card
Public Key Infrastructure
The asymmetric counterpart of the KST: for storage of the PKI keys and their
configuration.
Protocol and Parameter Selection
Programming Mask
Probabilistic Signature Scheme
Rev. 1 — 12 August 2010
…continued
191710
P5DF081
MIFARE SAM AV2
© NXP B.V. 2010. All rights reserved.
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