HMMC-5620 Avago Technologies US Inc., HMMC-5620 Datasheet

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HMMC-5620

Manufacturer Part Number
HMMC-5620
Description
TV / Video IC
Manufacturer
Avago Technologies US Inc.
Type
Gain Amplifierr
Datasheet

Specifications of HMMC-5620

Peak Reflow Compatible (260 C)
Yes
Bandwidth
20GHz
Leaded Process Compatible
Yes
Number Of Channels
1
Frequency (max)
20GHz
Output Power
12@20000MHzdBm
Power Supply Requirement
Single
Single Supply Voltage (max)
7.5V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Supply Current
135@5VmA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HMMC-5620
Manufacturer:
TI/NSC
Quantity:
760
Description
The HMMC-5620 is a wideband
GaAs MMIC amplifier designed
for medium output power and
high gain over the 6 to 20 GHz
frequency range. Four MESFET
cascade stages provide high gain,
while the single bias supply of-
fers ease of use. E–Beam lithog-
raphy is used to produce gate
lengths of 0.3 m. The HMMC-
5620 incorporates advanced
MBE technology, Ti–Pt–Au gate
metallization, silicon nitride pas-
sivation, and polyimide for
scratch protection.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1410
127
80 80 m (2.95 2.95 mils), or larger
10 m ( 0.4 mils)
Agilent HMMC-5620
6–20 GHz High–Gain Amplifier
Data Sheet
Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this
Symbol
V
I
P
P
T
T
T
T
DD
device. T
ch
case
stg
max
DD
DC
in
15 m (5.0
1010 m 55.5
A
= 25 C except for T
Parameters/Conditions
Positive Drain Voltage
Total Drain Current
DC Power Dissipation
CW Input Power
Operating Channel Temp.
Operating Case Temperature
Storage Temperature
Maximum Assembly Temp.
(for 60 seconds maximum)
0.6 mils)
39.7 mils)
ch
, T
stg
, and T
[1]
max
.
Features
•Wide-Frequency Range:
•High Gain: 17 dB
•Gain Flatness:
•Return Loss:
•Single Bias Supply
•Low DC Power Dissipation:
•Medium Power:
Operation
P
6–20 GHz
Input
Output 15 dB
20 GHz: P
DC
~ 0.5 Watts
15 dB
-1dB
Min.
55
65
: 12 dBm, P
1.0 dB
Max.
+160
+165
135
300
7.5
1.0
20
sat
: 13 dBm
watts
Units
volts
dBm
mA
C
C
C
C
1

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HMMC-5620 Summary of contents

Page 1

... Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5620 is a wideband GaAs MMIC amplifier designed for medium output power and high gain over the GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply of- fers ease of use. E– ...

Page 2

DC Specifications/Physical Properties Symbol Parameters/Conditions I Drain Current ( 5.0 volts Drain Current ( 7.0 volts Thermal Resistance (T ch-bs Notes: 1. Measured in wafer form with ...

Page 3

... FEEDBACK NTWK Matching RF Input Matching GND GND (V ). The recommended bias DD for the HMMC-5620 5.0V, which results 100 DD mA (Typ.). No other bias sup- plies or connections to the de- vice are required for GHz operation. See Figure 3 for as- sembly information. Assembly Techniques ...

Page 4

RF Input Chip ID No. 1010 (±10) 350 (1.0 mil Gold Wire Bond Length 100 mils 875 (V Pad (RF Input Pad) 1325 (RF Output Pad) 1410 (±10) Figure 2. ...

Page 5

V =5.0V, I =100mA Frequency (GHz) Figure 4. Typical Gain and Reverse Isolation vs. Frequency [1] Typical S-Parameters ( C,V = ...

Page 6

Additional Performance Characteristics (V =5.0V, I (Q)=100mA Frequency (GHz) Figure 6. Typical Output Power vs. Frequency (w/ 5V bias) (V =7.0V, I (Q)=105mA) DD ...

Page 7

This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th per- centile performance. ...

Page 8

8 ...

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