VMMK-1218-BLKG Avago Technologies US Inc., VMMK-1218-BLKG Datasheet - Page 2

• Manufacturer Part Number: VMMK-1218-BLKG
• Description: TRANSISTOR,HEMT,N-CHAN,5V V(BR)DSS,WAFER
• Manufacturer: Avago Technologies US Inc.

Specifications of VMMK-1218-BLKG

• Package / Case: 0402 (1005 Metric) - 1.00mm L x 0.50mm W x 0.25mm H
• Current Rating: 100mA
• Power - Output: 12dBm
• Frequency: 10GHz
• Gain: 9dB
• Transistor Type: E-pHEMT
• Noise Figure: 0.81dB
• Current - Test: 20mA
• Voltage - Test: 3V
• Configuration: Single
• Gate-source Voltage (max): 1V
• Pin Count: 3
• Drain-gate Voltage (max): -5 to 1V
• Drain-source Volt (max): 5V
• Operating Temperature (max): 150C
• Mounting: Surface Mount
• Continuous Drain Current: 100mA
• Package Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VMMK-1218 Absolute Maximum Ratings
Figure 1. Typical I-V Curves. (VGS=0.1 V per step)
VMMK-1218 RF Specifications (on board)
T
Notes:
6. Specifications are derived from measurements in a test circuit.
7. All tested parameters guaranteed with measurement accuracy ± 0.5dB for gain.
2
Sym
Vds
Vgs
Vgd
Ids
Igs
Pdn
Pin
Tch
θjc
Sym
Vgs
Igs
Gm
Ga
NF
Fmin
P-1dB
OIP3
A
= 25°C, Freq = 10 GHz, Vds = 3V, Ids = 20mA, Zo = 50 Ω (unless otherwise specified)
70
60
50
40
30
20
10
0
0
Parameters/Condition
Gate Voltage
Gate Current
Transconductance
Associated Gain
Noise Figure
Noise Figure min
1dB Compressed Output Power
Output 3
1
rd
Order Intercept Point
2
Parameters/Condition
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
RF CW Input Power Max
Max channel temperature
Thermal Resistance
3
V
DS
(V)
[2]
4
[2]
[4]
[6,7]
[2]
[2]
5
[3]
6
0.7 V
0.6 V
0.5 V
0.4 V
0.3 V
Units
V
uA
mS
dB
dB
dB
dBm
dBm
7
Notes:
1. Operation in excess of any of these conditions may results in
2. Assumes DC quiescent conditions
3. Ambient operational temperature T
4. Thermal resistance measured using 150°C Liquid Crystal Measurement
5. The device can handle + 10dBm RF input power provided lgs is
permanent damage to this device.
Method
limited to 1ma
Min
0.48
6.7
Unit
V
V
V
mA
mA
mW
dBm
C
C/W
Typ.
0.58
0.4
200
9
0.81
0.71
+12
+22
A
=25°C unless noted.
Max
5
-5 to 1
-5 to 1
100
1.6
300
10
+150
200
Max
0.68
10.2
1.5