VMMK-1218-BLKG Avago Technologies US Inc., VMMK-1218-BLKG Datasheet

VMMK-1218-BLKG

Manufacturer Part Number

VMMK-1218-BLKG

Description

TRANSISTOR,HEMT,N-CHAN,5V V(BR)DSS,WAFER

Manufacturer

Avago Technologies US Inc.

Datasheet

1.VMMK-1218-BLKG.pdf (12 pages)

Specifications of VMMK-1218-BLKG

Package / Case

0402 (1005 Metric) - 1.00mm L x 0.50mm W x 0.25mm H

Current Rating

100mA

Power - Output

12dBm

Frequency

10GHz

Gain

9dB

Transistor Type

E-pHEMT

Noise Figure

0.81dB

Current - Test

20mA

Voltage - Test

Configuration

Single

Gate-source Voltage (max)

Pin Count

Drain-gate Voltage (max)

-5 to 1V

Drain-source Volt (max)

Operating Temperature (max)

150C

Mounting

Surface Mount

Continuous Drain Current

100mA

Package Type

SMD

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

VMMK-1218-BLKG

Manufacturer:

M/A-COM

Quantity:

5 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

VMMK-1218-BLKG

Manufacturer:

AVAGO/安华高

Quantity:

20 000

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Description

Avago Technologies has combined it’s industry leading

E-pHEMT technology with a revolutionary chip scale

package. The VMMK-1218 can produce an LNA with

high dynamic range, high gain and low noise figure that

generates off of a single position DC power supply. The

GaAsCap wafer scale sub-miniature leadless package is

small and ultra thin, yet can be handled and placed with

standard 0402 pick and place assembly.

The use of 0.25 micron gates allow a ultra low noise figure

(below 1dB from 500 MHz to 12 GHz) with respectable as-

sociated gain. With a flat transconductance over bias and

frequency the VMMK-1218 provides excellent linearity

of over 30 dBm and power over 15 dBm at one dB com-

pression. This product is easy to use since it requires only

positive DC voltages for bias and low matching coeffi-

cients for simple impedance matching to 50 Ω systems.

The VMMK-1218 is intended for any 500MHz to 18GHz ap-

plication including 802.11abgn WLAN, WiMax, BWA 802.16

& 802.20 and military applications.

GaAsCap 0402, 1.0mm x 0.5mm x 0.25mm

VMMK-1218

0.5 to 18 GHz Low Noise E-PHEMT

in a Wafer Scale Package

Data Sheet

Notes: Top view package marking provides orientation

Notes:

“b” = Device Code

“YY” = Year Code

gate

source

drain

Gate

Pin Connections (Top View)

• BYY

Drain

Features

• Sub-miniature 0402 (1mm x 0.5mm) Surface Mount

• Low height (0.25mm)

• Frequency Range 0.5 to 18 GHz

• Enhancement Mode

• 0.25 micron gate width

• Tape and Reel packaging option available

• Point MTTF > 300 years at 120

Specifications

• 0.7 dB Fmin

• 9.0 dB Ga

• +22 dBm output 3

• +12 dBm output power

Applications

• Low Noise and Driver for Cellular/PCS and WCDMA

• 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook

• DBS 10 to 13 GHz receivers

• VSAT and SATCOM 13 to 18 GHz systems

• 802.16 & 802.20 BWA systems

• WLL and MMDS Transceivers

• General purpose discrete E-pHEMT for other ultra low

Notes:

1. The Avago enhancement mode pHEMT devices do not require a

Leadless Package

Base Stations

computer,

applications

noise applications

negative gate bias voltage as they are “normally off”. They can help

simplify the design and reduce the cost of receivers and transmitters

in many applications from 500 MHz to 18 GHz

access

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = MM20 V (class A)

ESD Human Body Model = 100 V (Class 0)

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

order intercept

[1]

point

and

C channel temperature

mobile

wireless

Related parts for VMMK-1218-BLKG

VMMK-1218-BLKG Summary of contents

Page 1

... This product is easy to use since it requires only positive DC voltages for bias and low matching coeffi- cients for simple impedance matching to 50 Ω systems. The VMMK-1218 is intended for any 500MHz to 18GHz ap- plication including 802.11abgn WLAN, WiMax, BWA 802.16 & 802.20 and military applications. ...

Page 2

... Thermal Resistance (V) DS Figure 1. Typical I-V Curves. (VGS=0.1 V per step) VMMK-1218 RF Specifications (on board 25°C, Freq = 10 GHz, Vds = 3V, Ids = 20mA Ω (unless otherwise specified) A Sym Parameters/Condition Vgs Gate Voltage Igs Gate Current Gm Transconductance Ga Associated Gain NF Noise Figure Fmin Noise Figure min P-1dB ...

Page 3

... LSL=0.48, Nominal=0.58, USL=0.68, CPK=2.2 Note: 1. Distribution data based at least 500 part sample size from two wafers during initial characterization of this product. Future wafers allocated to this product may have nominal values anywhere between upper and lower limits. VMMK-1218 Typical Performance Curve 25.00 20.00 15.00 10 ...

Page 4

... VMMK-1218 Typical Performance Curve Ids (mA) Figure 9. Gain vs. Ids at 10 GHz (mA) Figure 11. OIP3 vs. Ids at 3V over temperature at 10 GHz 1. Figure 10. OIP3 vs. Ids at 2V over temperature at 10 GHz -40C 25C 85C (mA) -40C 25C 85C 20 25 ...

Page 5

... VMMK-1218 Typical Scattering Parameters and Noise Parameters, T Freq S11 GHz Mag. Ang 0.89 -78.16 20.92 3 0.85 -106.33 19.31 4 0.81 -128.95 17.70 5 0.79 -146.66 16.25 6 0.78 -161.38 14.93 7 0.78 -173.77 13.74 8 0.77 175.63 12.65 9 0.77 166.49 11.64 10 0.78 158.16 10.71 11 0.78 150.76 9 ...

Page 6

... VMMK-1218 Typical Scattering Parameters and Noise Parameters, T Freq S11 GHz Mag. Ang 0.89 -78.70 20.79 3 0.84 -106.97 19.15 4 0.80 -129.59 17.52 5 0.79 -147.25 16.06 6 0.78 -161.95 14.74 7 0.77 -174.30 13.53 8 0.77 175.11 12.45 9 0.77 165.97 11.42 10 0.77 157.70 10.49 11 0.77 150.33 9 ...

Page 7

... VMMK-1218 Typical Scattering Parameters and Noise Parameters, T Freq S11 GHz Mag. Ang. 2 0.90 -78.41 20.88 3 0.85 -106.62 19.27 4 0.82 -129.23 17.67 5 0.80 -146.90 16.21 6 0.79 -161.57 14.90 7 0.78 -173.94 13.71 8 0.78 175.49 12.63 9 0.78 166.35 11.62 10 0.78 158.10 10.70 11 0.79 150.68 9 ...

Page 8

Small Signal Model Parameters Parameter Value Parameter Vd (V) 1.5 Vd (V) Id (mA (mA) Gm 0.1162 Gm tau 0.00188 tau Cgs 0.5131 Cgs Rgs 0.2126 Rgs Cgd 0.06932 Cgd Cds 0.1587 Cds Rds 334.70 Rds Parameter Value ...

Page 9

... VMMK-1218 ADS Model PORT IND RES ID=L1 ID=R3 P=1 Z=50 Ohm L=Lg nH R=Rg Ohm CAP ID=C1 C=Cgs pF CAP ID=C3 C=Cpgs pF Rg Value Rg 4.729 Rd 1.29495 RsG 2.283 C pgs 0.0475 C pds 0.0318 C pgd 0.00417 Ls 0.000559 Lg 0.32446 Ld 0.2602 9 CAP ID=C6 C=Cpgd pF CAP ID=C4 C=Cgd pF ...

Page 10

... Ramp 1 Preheat Ramp 2 Reflow 0 0 .020 [0.508] Figure 15. Suggested Lead-Free Reflow Profile for SnAgCu Solder Paste Part Number Ordering Information Part Number VMMK-1218-BLKG VMMK-1218-TR1G Peak = 250 ± 5 °C Melting point = 218 °C Cooling 50 100 150 200 250 SECONDS No ...

Page 11

Package Dimension Outline D E Notes: All dimensions are in mm Device Orientation REEL USER FEED CARRIER DIRECTION TAPE 11 Symbol Min (mm) E 0.525 D 1.004 A 0.235 A Max (mm) 0.575 1.066 0.265 4 mm End View Top ...

Page 12

Tape Dimensions Note RO.1 5º <Max> Scale 5:1 A-A Section Notes sprocket hole pitch cumulative tolerance is ±0 Pocket position relative to sprocket hole measured as true position of ...

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