SIR410DP-T1-GE3 Vishay, SIR410DP-T1-GE3 Datasheet - Page 6
![N-CHANNEL 20-V (D-S) MOSFET](/photos/29/5/290573/power-pak-so-8_sml.jpg)
SIR410DP-T1-GE3
Manufacturer Part Number
SIR410DP-T1-GE3
Description
N-CHANNEL 20-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SIR410DP-T1-GE3.pdf
(7 pages)
Specifications of SIR410DP-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0048 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Power Dissipation
4200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO
Drain Source Voltage Vds
20V
On Resistance Rds(on)
4mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
PowerPAK
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR410DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiR410DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68997.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
- 4
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
0.02
10
0.05
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
- 3
10
- 2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
- 1
10
- 2
1
10
10
Notes:
1 .
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Duty Cycle, D =
- 1
JM
- T
t
1
A
= P
S-82586-Rev. A, 27-Oct-08
t
2
Document Number: 68997
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 58 °C/W
600
1