SIR410DP-T1-GE3 Vishay, SIR410DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIR410DP-T1-GE3
• Description: N-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SIR410DP-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0048 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 4200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PowerPAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiR410DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68997.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
- 4
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
0.02
10
0.05
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
- 3
10
- 2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
- 1
10
- 2
1
10
10
Notes:
1 .
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Duty Cycle, D =
- 1
JM
- T
t
1
A
= P
S-82586-Rev. A, 27-Oct-08
t
2
Document Number: 68997
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 58 °C/W
600
1