SIR410DP-T1-GE3 Vishay, SIR410DP-T1-GE3 Datasheet - Page 5
![N-CHANNEL 20-V (D-S) MOSFET](/photos/29/5/290573/power-pak-so-8_sml.jpg)
SIR410DP-T1-GE3
Manufacturer Part Number
SIR410DP-T1-GE3
Description
N-CHANNEL 20-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SIR410DP-T1-GE3.pdf
(7 pages)
Specifications of SIR410DP-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0048 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Power Dissipation
4200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO
Drain Source Voltage Vds
20V
On Resistance Rds(on)
4mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
PowerPAK
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR410DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68997
S-82586-Rev. A, 27-Oct-08
80
60
40
20
0
0
Package Limited
25
D
T
is based on T
C
50
Current Derating*
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
40
32
24
16
8
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiR410DP
www.vishay.com
125
150
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