SIR410DP-T1-GE3 Vishay, SIR410DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIR410DP-T1-GE3
• Description: N-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SIR410DP-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0048 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 4200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PowerPAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68997
S-82586-Rev. A, 27-Oct-08
80
60
40
20
0
0
Package Limited
25
D
T
is based on T
C
50
Current Derating*
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
40
32
24
16
8
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiR410DP
www.vishay.com
125
150
5