SIR410DP-T1-GE3 Vishay, SIR410DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR410DP-T1-GE3
• Description: N-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SIR410DP-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0048 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 4200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PowerPAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiR410DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
= 150 °C
J
25
- Temperature (°C)
I
D
= 250 µA
0.6
50
75
0.8
0.01
100
T
0.1
100
Limited by R
10
J
1
0.01
= 25 °C
Safe Operating Area, Junction-to-Ambient
1.0
* V
125
Single Pulse
T
GS
A
= 25 °C
> minimum V
DS(on)
V
150
1.2
DS
0.1
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.015
0.012
0.009
0.006
0.003
0.000
DS(on)
50
40
30
20
10
0
0.001
0
10
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
0.01
2
V
GS
100
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
S-82586-Rev. A, 27-Oct-08
1
Document Number: 68997
6
10
T
T
I
D
J
J
= 125 °C
= 20 A
= 25 °C
8
100
600
10