SIR410DP-T1-GE3 Vishay, SIR410DP-T1-GE3 Datasheet - Page 4
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SIR410DP-T1-GE3
Manufacturer Part Number
SIR410DP-T1-GE3
Description
N-CHANNEL 20-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SIR410DP-T1-GE3.pdf
(7 pages)
Specifications of SIR410DP-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0048 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Power Dissipation
4200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO
Drain Source Voltage Vds
20V
On Resistance Rds(on)
4mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
PowerPAK
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR410DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiR410DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
= 150 °C
J
25
- Temperature (°C)
I
D
= 250 µA
0.6
50
75
0.8
0.01
100
T
0.1
100
Limited by R
10
J
1
0.01
= 25 °C
Safe Operating Area, Junction-to-Ambient
1.0
* V
125
Single Pulse
T
GS
A
= 25 °C
> minimum V
DS(on)
V
150
1.2
DS
0.1
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.015
0.012
0.009
0.006
0.003
0.000
DS(on)
50
40
30
20
10
0
0.001
0
10
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
0.01
2
V
GS
100
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
S-82586-Rev. A, 27-Oct-08
1
Document Number: 68997
6
10
T
T
I
D
J
J
= 125 °C
= 20 A
= 25 °C
8
100
600
10