SI7129DN-T1-GE3 Vishay, SI7129DN-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7129DN-T1-GE3
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7129DN-T1-GE3

• Minimum Operating Temperature: - 50 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0114 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 37 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14.4 A
• Power Dissipation: 3800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68966
S10-2023-Rev. B, 06-Sep-10
75
60
45
30
15
0
0
25
Power, Junction-to-Case
T
D
C
is based on T
50
- Case Temperature (ºC)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
60
50
40
30
20
10
0
0
125
25
150
T
C
Current Derating*
- CaseTemperature (°C)
50
75
100
1.5
0.5
0
2
1
0
125
25
Power, Junction-to-Ambient
T
150
A
- Ambient Temperature (ºC)
50
75
Vishay Siliconix
100
Si7129DN
www.vishay.com
125
150
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