si7129dn Vishay, si7129dn Datasheet

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si7129dn

Manufacturer Part Number
si7129dn
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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si7129dn-T1-GE3
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si7129dn-T1-GE3
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si7129dn-T1-GE3
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2 760
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on T
Document Number: 68966
S-82576-Rev. A, 27-Oct-08
Ordering Information: Si7129DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 30
(V)
8
3.30 mm
D
C
7
0.0114 at V
0.0200 at V
= 25 °C
D
6
D
R
PowerPAK 1212-8
http://www.vishay.com/ppg?73257
DS(on)
Bottom V ie w
5
D
GS
GS
(Ω)
= - 10 V
= - 4.5V
J
= 150 °C)
1
S
2
S
P-Channel 30-V (D-S) MOSFET
3
S
I
D
3.30 mm
- 35
- 35
(A)
4
G
e,f
c, d
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C, unless otherwise noted
Q
24.6 nC
g
(Typ.)
New Product
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• Load Switch
• Adaptor Switch
• Notebook PC
Package with Small Size and Low 1.07 mm
Profile
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
stg
and UIS Tested
®
G
Power MOSFET
P-Channel MOSFET
S
D
- 50 to 150
- 14.4
- 11.5
- 3.2
3.8
2.4
31.25
Limit
- 35
- 35
- 35
± 20
52.1
- 30
- 60
- 25
260
3.3
a, b
a, b
a, b
e
e
a, b
a, b
e
Vishay Siliconix
®
Si7129DN
www.vishay.com
Unit
mJ
°C
W
V
A
1

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si7129dn Summary of contents

Page 1

... Bottom Ordering Information: Si7129DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7129DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... V 0.6 0.3 0 3600 3000 2400 1800 = 1200 600 1.8 1 0.9 0 Si7129DN Vishay Siliconix 125 ºC 25 º º Gate-to-Source Voltage ( Transfer Characteristics C iss C oss C rss Drain-Source Voltage (V) DS Capacitance ...

Page 4

... Si7129DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 º 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.4 2.2 2.0 1.8 1.6 1.4 1 Temperature (ºC) J Threshold Voltage 100 Limited by R 0.1 0.01 www.vishay.com 4 New Product 0.04 0.03 0. ºC J 0.01 0.00 0.8 1.0 1 250 µ ...

Page 5

... T - CaseTemperature (°C) C Current Derating* 2 1.5 1 0.5 0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7129DN Vishay Siliconix 125 150 100 125 T - Ambient Temperature (ºC) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7129DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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