SI7129DN-T1-GE3 Vishay, SI7129DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7129DN-T1-GE3
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7129DN-T1-GE3

• Minimum Operating Temperature: - 50 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0114 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 37 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14.4 A
• Power Dissipation: 3800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si7129DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
100
0.1
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
0.4
Threshold Voltage
= 150 ºC
T
J
25
- Temperature (ºC)
0.6
50
Limited by R
0.01
100
0.1
10
75
1
0.8
0.1
T
J
I
D
= 25 ºC
= 250 µA
* V
DS(on) *
Safe Operating Area, Junction-to-Ambient
100
GS
T
Single Pulse
1.0
A
> minimum V
= 25 ºC
125
V
DS
- Drain-to-Source Voltage (V)
1.2
150
1
GS
at which R
BVDSS Limited
10
DS(on)
0.04
0.03
0.02
0.01
0.00
is Specified
50
40
30
20
10
0
0.01
10 s
0
1 ms
10ms
100 ms
DC
100 µs
1 s
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
10
0.1
4
V
GS
6
- Gate-to-Source Voltage (V)
T
1.0
J
8
= 25 ºC
Time (s)
10
S10-2023-Rev. B, 06-Sep-10
T
Document Number: 68966
10
J
12
= 125 ºC
14
100
16
18
1000
20