SI6467BDQ-T1-E3 Vishay, SI6467BDQ-T1-E3 Datasheet - Page 3

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SI6467BDQ-T1-E3

Manufacturer Part Number
SI6467BDQ-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,6.8A I(D),TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6467BDQ-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12.5 mOhm @ 8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
850mV @ 450µA
Gate Charge (qg) @ Vgs
70nC @ 4.5V
Power - Max
1.05W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Drain Quad Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0125 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6.8 A
Power Dissipation
1050 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI6467BDQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 830
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
0.030
0.024
0.018
0.012
0.006
0.000
0.1
30
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 8 A
0.2
On-Resistance vs. Drain Current
= 6 V
12
V
V
6
GS
T
SD
J
Q
= 1.8 V
= 150 °C
- Source-to-Drain Voltage (V)
0.4
g
I
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
24
12
0.6
36
T
18
J
0.8
= 25 °C
V
V
GS
GS
48
= 2.5 V
= 4.5 V
24
1.0
1.2
60
30
6000
5000
4000
3000
2000
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
1
= 8 A
2
C
= 4.5 V
rss
T
V
V
0
2
J
GS
C
DS
- Junction Temperature (°C)
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
4
2 5
Capacitance
3
I
D
5 0
= 8 A
4
Vishay Siliconix
6
Si6467BDQ
7 5
5
C
8
iss
www.vishay.com
100
6
10
125
7
150
12
8
3

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