SI6467BDQ-T1-GE3 Vishay, SI6467BDQ-T1-GE3 Datasheet
SI6467BDQ-T1-GE3
Specifications of SI6467BDQ-T1-GE3
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SI6467BDQ-T1-GE3 Summary of contents
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... GS TSSOP Si6467BDQ Ordering Information: Si6467BDQ-T1 Si6467BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si6467BDQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72087 S-80682-Rev. D, 31-Mar-08 6000 5000 4000 V = 2.5 V 3000 4 2000 1000 °C J 0.8 1.0 1.2 Si6467BDQ Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.2 1.0 0.8 0 ...
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... Si6467BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited on 0 °C C Single Pulse ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72087. Document Number: 72087 S-80682-Rev. D, 31-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6467BDQ Vishay Siliconix - www.vishay.com 10 5 ...
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