SI6467BDQ-T1-E3 Vishay, SI6467BDQ-T1-E3 Datasheet

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SI6467BDQ-T1-E3

Manufacturer Part Number
SI6467BDQ-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,6.8A I(D),TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6467BDQ-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12.5 mOhm @ 8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
850mV @ 450µA
Gate Charge (qg) @ Vgs
70nC @ 4.5V
Power - Max
1.05W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Drain Quad Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0125 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6.8 A
Power Dissipation
1050 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI6467BDQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 830
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
Ordering Information: Si6467BDQ-T1
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 12
(V)
G
D
S
S
1
2
3
4
0.0125 at V
0.0155 at V
Si6467BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.020 at V
Si6467BDQ
TSSOP-8
T op V i e w
R
DS(on)
J
a
= 150 °C)
a
GS
GS
GS
= - 1.8 V
(Ω)
= - 4.5 V
= - 2.5 V
P-Channel 1.8-V (G-S) MOSFET
a
8
7
6
5
D
S
S
D
a
A
= 25 °C, unless otherwise noted
I
- 8.0
- 7.0
- 6.0
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free
• TrenchFET
G
Symbol
Symbol
T
R
R
J
P-Channel MOSFET
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
S*
D
®
Power MOSFETs
Typical
- 1.35
- 8.0
- 6.5
10 s
100
1.5
1.0
65
43
* Source Pins 2, 3, 6 and 7
must be tied common.
- 55 to 150
- 12
- 30
± 8
Steady State
Maximum
- 0.95
- 6.8
- 5.4
1.05
0.67
120
83
52
Vishay Siliconix
Si6467BDQ
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
°C
W
V
A
Available
Pb-free
1

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SI6467BDQ-T1-E3 Summary of contents

Page 1

... GS TSSOP Si6467BDQ Ordering Information: Si6467BDQ-T1 Si6467BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si6467BDQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72087 S-80682-Rev. D, 31-Mar-08 6000 5000 4000 V = 2.5 V 3000 4 2000 1000 °C J 0.8 1.0 1.2 Si6467BDQ Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.2 1.0 0.8 0 ...

Page 4

... Si6467BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited on 0 °C C Single Pulse ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72087. Document Number: 72087 S-80682-Rev. D, 31-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6467BDQ Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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