SI5445BDC-T1-E3 Vishay, SI5445BDC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5445BDC-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,5.2A I(D),CHIP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5445BDC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.033 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5445BDC-T1-E3TR

Si5445BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
0.05
0.02
Duty Cycle = 0.5
0.1
0.2
0
Threshold Voltage
T
J
- Temperature (°C)
25
Single Pulse
10
-3
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
0.1
10
-2
Limited by R
* V
Limited
I
125
D(on)
GS
Single Pulse
T
> minimum V
C
V
= 25 °C
150
DS
DS(on) *
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
Safe Operating Area
10
-1
GS
at which R
1
BVDSS Limited
DS(on)
50
40
30
20
10
0
I
1
10
DM
is specified
-3
Limited
10
-2
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
Single Pulse Power
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
-1
JM
Time (s)
- T
A
t
1
= P
S-83054-Rev. B, 29-Dec-08
1
t
Document Number: 73251
2
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 80 °C/W
100
600
600