SI5445BDC-T1-E3 Vishay, SI5445BDC-T1-E3 Datasheet - Page 3

TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,5.2A I(D),CHIP

SI5445BDC-T1-E3

Manufacturer Part Number
SI5445BDC-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,5.2A I(D),CHIP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5445BDC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
33 mOhm @ 5.2A, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.033 Ohm @ 4.5 V
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
5.2 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI5445BDC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5445BDC-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
86 988
Part Number:
SI5445BDC-T1-E3
Manufacturer:
Intel
Quantity:
40
Part Number:
SI5445BDC-T1-E3
Manufacturer:
VISHAY
Quantity:
2 981
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73251
S-83054-Rev. B, 29-Dec-08
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.2 A
V
GS
0.2
On-Resistance vs. Drain Current
= 10 V
3
4
= 1.8 V
V
Q
SD
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
I
6
D
- Drain Current (A)
Gate Charge
8
T
J
= 150 °C
0.6
9
12
12
0.8
T
J
= 25 °C
V
V
GS
GS
16
15
1.0
= 2.5 V
= 4.5 V
18
20
1.2
2000
1600
1200
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
400
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
I
D
GS
1
= 5.2 A
= 2 A
C
= 4.5 V
iss
1
V
V
DS
GS
T
2
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
3
I
2
D
C
oss
= 5.2 A
50
4
Vishay Siliconix
Si5445BDC
3
75
5
www.vishay.com
100
6
4
125
7
150
8
5
3

Related parts for SI5445BDC-T1-E3