SI4890DY-T1-E3 Vishay, SI4890DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4890DY-T1-E3
• Description: N-Ch MOSFET SO-8 30V 12mohm @ 10V Qg=20nC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4890DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4890DY-T1-E3TR

Si4890DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70855.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.0
0.6
0.4
0.2
- 1
50
10
1
- 50
0.01
0.1
0
2
1
10
- 25
Source-Drain Diode Forward Voltage
- 4
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
V
SD
0
0.4
T
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
J
= 150 °C
- Temperature (°C)
25
10
0.6
- 3
50
I
D
0.8
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
J
1.0
100
= 25 °C
10
- 2
125
1.2
150
1.4
Square Wave Pulse Duration (s)
10
- 1
0.10
0.08
0.06
0.04
0.02
50
40
30
20
10
0
1
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
2
V
10
GS
0.1
Single Pulse Power
- Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
Time (s)
- T
I
t
D
1
A
S09-0869-Rev. B, 18-May-09
= P
= 11 A
t
2
Document Number: 70855
DM
1
Z
6
thJA
100
thJA
t
t
1
2
(t)
= 70 °C/W
8
10
600
30
10