SI4890DY-T1-E3 Vishay, SI4890DY-T1-E3 Datasheet
SI4890DY-T1-E3
Specifications of SI4890DY-T1-E3
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SI4890DY-T1-E3 Summary of contents
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... Top View Ordering Information: Si4890DY -T1-E3 (Lead (Pb)-free) Si4890DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction Maximum Power Dissipation ...
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... Si4890DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time ...
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... On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge Document Number: 70855 S09-0869-Rev. B, 18-May- 1800 1500 1200 Si4890DY Vishay Siliconix 125 ° ° ° 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 900 600 C oss 300 C rss ...
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... Si4890DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
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