SI4890DY-T1-E3 Vishay, SI4890DY-T1-E3 Datasheet - Page 3

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SI4890DY-T1-E3

Manufacturer Part Number
SI4890DY-T1-E3
Description
N-Ch MOSFET SO-8 30V 12mohm @ 10V Qg=20nC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4890DY-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
11 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4890DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4890DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4890DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70855
S09-0869-Rev. B, 18-May-09
0.05
0.04
0.03
0.02
0.01
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
0
V
I
D
DS
= 11 A
On-Resistance vs. Drain Current
= 15 V
V
2
10
5
GS
V
Q
DS
Output Characteristics
= 4.5 V
g
V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
GS
I
D
Gate Charge
= 10 V thru 4 V
10
- Drain Current (A)
20
4
15
30
6
V
3 V
GS
20
8
40
= 10 V
10
25
50
1800
1500
1200
900
600
300
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
40
30
20
10
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
0.5
GS
= 1 1 A
C
= 10 V
rss
C
6
iss
1.0
T
V
Transfer Characteristics
0
J
GS
V
25 °C
- Junction Temperature (°C)
DS
- Gate-to-Source Voltage (V)
1.5
T
- Drain-to-Source Voltage (V)
C
25
C
Capacitance
= 125 °C
12
oss
2.0
50
Vishay Siliconix
2.5
18
75
Si4890DY
3.0
- 55 °C
100
www.vishay.com
3.5
24
125
4.0
150
30
4.5
3

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