SI4128DY-T1-GE3 Vishay, SI4128DY-T1-GE3 Datasheet - Page 5
![N-CHANNEL 30-V (D-S) MOSFET](/photos/15/83/158327/soic-8_sml.jpg)
SI4128DY-T1-GE3
Manufacturer Part Number
SI4128DY-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI4128DY-T1-GE3.pdf
(7 pages)
Specifications of SI4128DY-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4128DY-T1-GE3
Manufacturer:
Renesas
Quantity:
276
Part Number:
SI4128DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69004
S-83089-Rev. C, 29-Dec-08
12
9
6
3
0
0
25
T
D
C
Current Derating*
50
is based on T
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
New Product
5
4
3
2
1
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si4128DY
www.vishay.com
125
150
5