SI4128DY-T1-GE3 Vishay, SI4128DY-T1-GE3 Datasheet - Page 4
![N-CHANNEL 30-V (D-S) MOSFET](/photos/15/83/158327/soic-8_sml.jpg)
SI4128DY-T1-GE3
Manufacturer Part Number
SI4128DY-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI4128DY-T1-GE3.pdf
(7 pages)
Specifications of SI4128DY-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4128DY-T1-GE3
Manufacturer:
Renesas
Quantity:
276
Part Number:
SI4128DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4128DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
0.4
I
D
J
25
- Temperature (°C)
= 250 µA
0.6
50
75
0.8
0.01
100
0.1
10
100
T
1
0.1
J
= 25 °C
Safe Operating Area, Junction-to-Ambient
1.0
* V
Limited by R
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
New Product
V
150
1.2
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.08
0.06
0.04
0.02
30
25
20
15
10
5
0
0.001
0
is specified
0
On-Resistance vs. Gate-to-Source Voltage
I
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
D
= 7.8 A
0.01
100
2
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
1
S-83089-Rev. C, 29-Dec-08
Document Number: 69004
6
10
T
T
J
J
= 125 °C
100
8
= 25 °C
1000
10