SI4128DY-T1-GE3 Vishay, SI4128DY-T1-GE3 Datasheet - Page 3
![N-CHANNEL 30-V (D-S) MOSFET](/photos/15/83/158327/soic-8_sml.jpg)
SI4128DY-T1-GE3
Manufacturer Part Number
SI4128DY-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI4128DY-T1-GE3.pdf
(7 pages)
Specifications of SI4128DY-T1-GE3
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4128DY-T1-GE3
Manufacturer:
Renesas
Quantity:
276
Part Number:
SI4128DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69004
S-83089-Rev. C, 29-Dec-08
0.035
0.030
0.025
0.020
0.015
0.010
30
25
20
15
10
10
5
0
8
6
4
2
0
0.0
0
0
I
On-Resistance vs. Drain Current
D
0.5
= 7.8 A
5
V
DS
V
V
Output Characteristics
2
V
GS
GS
Q
DS
- Drain-to-Source Voltage (V)
g
1.0
I
10
= 4.5 V
= 10 V
V
D
- Total Gate Charge (nC)
= 15 V
GS
- Drain Current (A)
Gate Charge
= 10 thru 4 V
1.5
15
4
2.0
20
V
DS
V
6
= 24 V
GS
2.5
25
= 3 V
New Product
3.0
30
8
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
I
- 25
D
= 7.8 A
0.5
5
V
C
V
C
DS
Transfer Characteristics
iss
GS
T
0
oss
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
10
Capacitance
25
T
C
= 125 °C
1.5
15
50
T
C
Vishay Siliconix
= 25 °C
V
GS
75
2.0
= 10 V
20
Si4128DY
100
www.vishay.com
V
GS
T
2.5
C
25
= 4.5 V
125
= - 55 °C
150
3.0
30
3