SI4128DY-T1-GE3 Vishay, SI4128DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4128DY-T1-GE3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4128DY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69004
S-83089-Rev. C, 29-Dec-08
0.035
0.030
0.025
0.020
0.015
0.010
30
25
20
15
10
10
5
0
8
6
4
2
0
0.0
0
0
I
On-Resistance vs. Drain Current
D
0.5
= 7.8 A
5
V
DS
V
V
Output Characteristics
2
V
GS
GS
Q
DS
- Drain-to-Source Voltage (V)
g
1.0
I
10
= 4.5 V
= 10 V
V
D
- Total Gate Charge (nC)
= 15 V
GS
- Drain Current (A)
Gate Charge
= 10 thru 4 V
1.5
15
4
2.0
20
V
DS
V
6
= 24 V
GS
2.5
25
= 3 V
New Product
3.0
30
8
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
I
- 25
D
= 7.8 A
0.5
5
V
C
V
C
DS
Transfer Characteristics
iss
GS
T
0
oss
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
10
Capacitance
25
T
C
= 125 °C
1.5
15
50
T
C
Vishay Siliconix
= 25 °C
V
GS
75
2.0
= 10 V
20
Si4128DY
100
www.vishay.com
V
GS
T
2.5
C
25
= 4.5 V
125
= - 55 °C
150
3.0
30
3