SI2316BDS-T1-E3 Vishay, SI2316BDS-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI2316BDS-T1-E3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2316BDS-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 15V
• Power - Max: 1.66W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si2316BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
100
2.6
2.4
2.2
2.0
1.8
1.6
1.4
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
T
0
- Source-to-Drain Voltage (V)
J
Threshold Voltage
T
= 150 °C
0.4
J
- Temperature ( C)
25
0.6
50
75
T
0.8
J
I
D
0.001
= 25 °C
0.01
= 250 µA
100
100
0.1
10
1
0.1
1.0
R
*V
125
DS(on)
GS
Single Pulse
T
A
1.2
Limited*
150
V
= 25 °C
minimum V
DS
- Drain-to-Source Voltage (V)
Safe Operating Area
1
GS
at which R
DS(on)
10
0.12
0.09
0.06
0.03
0.00
10
8
6
4
2
0
0.01
0
is specified
I
D
On-Resistance vs. Gate-to-Source Voltage
= 4.1 A
100 ms
10 ms
1 s
10 s
DC
0.1
2
100
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
4
Single Pulse
1
T
Time (s)
A
= 25 °C
S09-1503-Rev. B, 10-Aug-09
Document Number: 70445
T
A
6
10
= 125 °C
T
A
8
= 25 °C
100
600
10