SI2316BDS Vishay, SI2316BDS Datasheet

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SI2316BDS

Manufacturer Part Number
SI2316BDS
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SI2316BDS-T1-E3
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SI2316BDS-T1-GE3
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Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 130 °C/W.
Document Number: 70445
S-71330-Rev. A, 02-Jul-07
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
C
= 25 °C.
0.080 at V
0.050 at V
r
DS(on)
GS
GS
J
(Ω)
= 150 °C)
= 4.5 V
b, d
= 10 V
N-Channel 30-V (D-S) MOSFET
Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free)
I
D
4.5
3.4
(A)
Steady State
a
≤ 5 sec
A
Q
G
S
3.16 nC
= 25 °C, unless otherwise noted
g
(Typ)
New Product
1
2
Si2316DS (M6)*
*Marking Code
(SOT-23)
Top View
T
T
T
T
T
TO-236
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
R
R
thJA
thJF
FEATURES
APPLICATIONS
• TrenchFET
• PWM Optimized
• 100 % R
• Battery Switch
• DC/DC Converter
3
D
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
g
stg
tested
Typical
®
Power MOSFET
80
60
- 55 to 150
3.13
1.04
1.25
3.9
0.8
Limit
± 20
1.39
1.66
1.06
4.5
3.6
30
20
Maximum
b, c
b, c
b, c
b, c
b, c
Vishay Siliconix
100
75
Si2316BDS
www.vishay.com
°C/W
Unit
RoHS
Unit
COMPLIANT
°C
W
V
A
1

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SI2316BDS Summary of contents

Page 1

... PWM Optimized 4.5 • 100 % R 3.16 nC 3.4 APPLICATIONS • Battery Switch • DC/DC Converter TO-236 (SOT-23 Top View Si2316DS (M6)* *Marking Code Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free °C, unless otherwise noted A Symbol ° ° ° ° ...

Page 2

... Si2316BDS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 70445 S-71330-Rev. A, 02-Jul-07 New Product Si2316BDS Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS ...

Page 4

... Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.6 2.4 2.2 2.0 1.8 1.6 1 Temperature ( C) J Threshold Voltage www.vishay.com 4 New Product 0.12 0.09 0. °C J 0.03 0.00 0.8 1.0 1 250 µ 100 125 150 ...

Page 5

... Document Number: 70445 S-71330-Rev. A, 02-Jul-07 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Si2316BDS Vishay Siliconix 2.0 1.6 1.2 0.8 0.4 0 100 T - Case Temperature (° ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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