SI2316BDS-T1-E3 Vishay, SI2316BDS-T1-E3 Datasheet
SI2316BDS-T1-E3
Specifications of SI2316BDS-T1-E3
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SI2316BDS-T1-E3 Summary of contents
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... R (Ω) DS DS(on) 0.050 0.080 4 Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...
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... Si2316BDS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
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... Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 3 Total Gate Charge (nC) g Gate Charge Document Number: 70445 S09-1503-Rev. B, 10-Aug- Si2316BDS Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 500 400 300 C iss 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...
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... Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.6 2.4 2.2 2.0 1.8 1.6 1 Temperature ( C) J Threshold Voltage www.vishay.com 4 0.12 0.09 0. °C J 0.03 0.00 0.8 1 ...
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... Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si2316BDS Vishay Siliconix 2.0 1.6 1.2 0.8 0.4 0 100 T - Case Temperature (° ...
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