GB200TS60NPBF Vishay, GB200TS60NPBF Datasheet - Page 6

• Manufacturer Part Number: GB200TS60NPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,209A I(C)
• Manufacturer: Vishay

Specifications of GB200TS60NPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 209 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GB200TS60NPbF
Vishay High Power Products
www.vishay.com
6
0.001
0.001
0.01
0.01
0.1
0.1
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED
1
1
1E-05
1E-05
Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
D = 0.2
D = 0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.2
D = 0.1
D = 0.02
D = 0.01
D = 0.5
D = 0.05
D = 0.5
For technical questions, contact:
1E-04
1E-04
(Thermal Response)
(Thermal Response)
(Ultrafast Speed IGBT), 209 A
Single Pulse
Single Pulse
t
t
1
INT-A-PAK "Half-Bridge"
1
, Rectangular Pulse Duration (sec)
1E-03
, Rectangular Pulse Duration (sec)
1E-03
1E-02
[e-mail]
1E-02
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
1E-01
1E-01
1E+00
1E+01
1E+00
®
)
Document Number: 94503
Revision: 04-May-10