GB200TS60NPBF Vishay, GB200TS60NPBF Datasheet - Page 4

• Manufacturer Part Number: GB200TS60NPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,209A I(C)
• Manufacturer: Vishay

Specifications of GB200TS60NPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 209 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GB200TS60NPbF
Vishay High Power Products
www.vishay.com
4
8000
7000
6000
5000
4000
3000
2000
1000
200
150
100
160
140
120
100
50
80
60
40
20
0
0
0
0.0
Fig. 5 - Diode Forward Characteristics,
Fig. 6 - Maximum Collector Current vs.
50
T
0
J
Fig. 7 - Typical Energy Loss vs. I
= 125 °C, L = 200 μH, V
Maximum DC Collector Current (A)
50
Tj = 125°C
R
0.5
g
Case Temperature
= 10 Ω, V
100
t
100
p
V
= 500 μs
Eoff
I
F
C
1.0
(V)
(A)
GE
150
Tj = 25°C
= 15 V
150
Eon
1.5
DC
CC
For technical questions, contact:
200
= 360 V,
C
250
2.0
200
(Ultrafast Speed IGBT), 209 A
INT-A-PAK "Half-Bridge"
[e-mail]
1000
10000
13000
12000
11000
10000
100
1000
9000
8000
7000
6000
5000
4000
3000
10
100
10
40
0
T
T
Fig. 10 - Typical Switching Time vs. R
T
5
Fig. 8 - Typical Switching Time vs. I
J
J
J
Fig. 9 - Typical Energy Loss vs. R
td(off)
td(on)
60
= 125 °C, L = 200 μH, V
= 125 °C, L = 200 μH, V
= 125 °C, L = 200 μH, V
tf
tr
10
10
80 100 120 140 160 180 200 220
td(off)
I
I
15
R
CE
CE
tr
tf
g
= 200 A, V
= 200 A, V
= 10 Ω, V
20
20
Eoff
td(on)
R
I
R
25
C
G
G
(A)
(Ω)
(Ω)
30
Eon
GE
30
GE
GE
= 15 V
35
= 15 V
= 15 V
Document Number: 94503
CC
CC
CC
40
40
= 360 V,
= 360 V,
= 360 V,
45
Revision: 04-May-10
50
50
g
C
g