GB200TS60NPBF Vishay, GB200TS60NPBF Datasheet - Page 2

• Manufacturer Part Number: GB200TS60NPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,209A I(C)
• Manufacturer: Vishay

Specifications of GB200TS60NPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 209 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GB200TS60NPbF
Vishay High Power Products
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leakage current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
For technical questions, contact:
SYMBOL
SYMBOL
V
RBSOA
SCSOA
V
V
BR(CES)
t
t
I
I
CE(on)
V
GE(th)
E
E
E
E
E
E
d(on)
d(off)
CES
GES
Q
Q
t
I
t
I
FM
t
t
on
off
tot
on
off
tot
rr
rr
rr
rr
r
f
rr
rr
J
(Ultrafast Speed IGBT), 209 A
J
= 25 °C unless otherwise specified)
= 25 °C unless otherwise specified)
INT-A-PAK "Half-Bridge"
V
V
V
V
V
V
V
V
I
I
I
I
V
I
R
I
R
T
R
T
R
I
V
I
V
C
C
C
C
C
C
F
F
GE
GE
GE
GE
GE
CE
GE
GE
GE
J
J
CC
CC
g
g
g
g
= 50 A, dI
= 50 A, dI
= 100 A
= 200 A
= 100 A, T
= 200 A, T
= 200 A, V
= 200 A, V
= 150 °C, I
= 150 °C, V
= 10 Ω, L = 200 μH, T
= 10 Ω, L = 200 μH, T
= 27 Ω, V
= 27 Ω, V
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= V
= 0 V, V
= 0 V, V
= ± 20 V
= 400 V, T
= 400 V, T
GE
TEST CONDITIONS
TEST CONDITIONS
, I
C
C
F
F
CE
CE
C
C
C
C
GE
GE
J
J
CC
CC
/dt = 200 A/μs,
/dt = 200 A/μs,
= 500 μA
= 500 μA
C
= 125 °C
= 125 °C
= 100 A
= 200 A
= 100 A, T
= 200 A, T
CC
J
J
= 600 V
= 600 V, T
= 400 A,
= 15 V to 0
= 15 V to 0
= 360 V, V
= 360 V, V
= 25 °C
= 125 °C
= 400 V, V
[e-mail]
J
J
J
J
J
= 125 °C
= 125 °C
GE
= 25 °C
GE
= 125 °C
= 150 °C
P
= 15 V,
= 15 V,
= 600 V,
MIN.
MIN.
600
10
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
0.005
10.55
TYP.
TYP.
1900
3600
1.95
2.28
3.14
0.01
1.39
1.64
1.32
1.67
3.65
11.6
507
133
538
226
290
2.6
4.2
6.9
3.8
7.8
92
17
25
-
-
-
Document Number: 94503
Revision: 04-May-10
MAX.
± 200
MAX.
2600
5000
2.84
3.48
1.78
1.69
2.30
260
330
2.1
2.5
0.2
2.2
15
20
30
6
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
mA
mJ
nA
nC
nC
ns
ns
ns
V
V
A
A