GA75TS120UPBF Vishay, GA75TS120UPBF Datasheet - Page 4

• Manufacturer Part Number: GA75TS120UPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2kV V(BR)CES,75A I(C)
• Manufacturer: Vishay

Specifications of GA75TS120UPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 110 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GA75TS120UPbF
Vishay High Power Products
www.vishay.com
4
25 000
20 000
15 000
10 000
5000
20
15
10
0
5
0
1
0
V
I
V
C
CC
0.01
CE
= 85 A
0.1
= 400 V
0.0001
Fig. 8 - Typical Gate Charge vs.
1
Fig. 7 - Typical Capacitance vs.
- Collector to Emitter Voltage (V)
Q
Collector to Emitter Voltage
G
Gate to Emitter Voltage
- Total Gate Charge (nC)
200
(thermal response)
Single pulse
V
C
C
C
GE
ies
res
oes
10
0.001
= 0 V, f = 1 MHz
= C
= C
= C
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
ge
gc
ce
+ C
+ C
400
gc
gc
For technical questions, contact:
, C
ce
shorted
0.01
"Half-Bridge" IGBT INT-A-PAK
t
100
600
(Ultrafast Speed IGBT), 75 A
1
- Rectangular Pulse Duration (s)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
[e-mail]
1
100
Fig. 9 - Typical Switching Losses vs. Gate Resistance
26
24
22
20
10
18
0
1
10
Fig. 10 - Typical Switching Losses vs.
Notes:
1. Duty factor D = t
2. Peak T
10
T
30
J
R
- Junction Temperature (°C)
20
G
Junction Temperature
- Gate Resistance (Ω)
J
= P
60
DM
P
DM
100
x Z
1
30
/t
I
t
C
1
thJC
2
t
= 25 A
2
90
+ T
I
C
= 150 A
I
C
C
Document Number: 94427
= 75 A
40
120
1000
Revision: 03-May-10
150
50