GA75TS120UPBF Vishay, GA75TS120UPBF Datasheet - Page 2

• Manufacturer Part Number: GA75TS120UPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2kV V(BR)CES,75A I(C)
• Manufacturer: Vishay

Specifications of GA75TS120UPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 110 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GA75TS120UPbF
Vishay High Power Products
Note
(1)
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold voltage
Forward transconductance
Collector to emitter leaking current
Diode forward voltage
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode peak rate of fall of recovery during t
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to sink per module
Mounting torque
Weight of module
Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature
case to terminal 1, 2 and 3
case to heatsink
For technical questions, contact:
b
Diode
IGBT
ΔV
J
SYMBOL
SYMBOL
dI
V
J
= 25 °C unless otherwise specified)
V
GE(th)
V
"Half-Bridge" IGBT INT-A-PAK
E
E
(rec)M
(BR)CES
E
E
t
t
t
t
C
I
I
= 25 °C unless otherwise noted)
C
CE(on)
Q
Q
C
GE(th)
E
E
GES
d(on)
d(off)
off
d(on)
d(off)
off
Q
(Ultrafast Speed IGBT), 75 A
g
CES
Q
V
ts
ts
t
I
t
t
t
t
oes
on
on
ies
res
rr
ge
gc
rr
fe
r
r
F
f
f
g
rr
(1)
(1)
(1)
(1)
/ΔT
SYMBOL
/dt
R
R
J
thJC
thCS
V
V
I
V
V
Pulse width 50 μs, single shot
V
V
V
I
V
V
I
R
R
I
V
V
Inductor load
T
R
R
I
V
V
Inductor load
T
V
V
f = 1 MHz
R
R
I
V
dI/dt = 1300 A/μs
C
F
C
C
C
C
GE
GE
CE
CE
GE
GE
GE
GE
CC
CC
GE
J
CC
GE
J
GE
CC
CC
g1
g2
g1
g2
g1
g2
= 75 A, V
= 75 A, V
= 85 A
= 75 A
= 75 A
= 75 A
= 25 °C
= 125 °C
= 15 Ω
= 0 Ω
= 15 Ω
= 0 Ω
= 15 Ω
= 0 Ω
= 0 V, I
= 15 V, I
= 6.0 V, I
= 25 V, I
= 0 V, V
= 0 V, V
= 0 V, I
= ± 20 V
= ± 15 V
= ± 15 V
= 0 V
= 400 V
= 720 V
= 720 V
= 30 V
= 720 V
For screws M5 x 0.8
TEST CONDITIONS
TEST CONDITIONS
C
F
GE
[e-mail]
GE
TEST CONDITIONS
CE
CE
C
C
= 75 A
C
= 1 mA
= 0 V, T
= 75 A
= 75 A
= 15 V, T
= 750 μA
= 1200 V
= 1200 V, T
J
J
= 125 °C
= 125 °C
J
= 125 °C
MIN.
1200
MIN.
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
200
0.1
-
-
-
-
12 815
TYP.
TYP.
9367
1491
Document Number: 94427
2.25
0.03
2.83
- 14
107
570
189
437
395
245
453
415
661
570
110
174
107
2.5
4.5
4.3
96
60
70
11
19
3
5
3
8
8
-
-
MAX.
0.32
0.35
Revision: 03-May-10
4.0
3.0
-
-
MAX.
MAX.
250
854
144
283
3.7
3.3
6.0
1.0
3.6
3.3
10
32
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
°C/W
UNITS
UNITS
mV/°C
Nm
A/μs
g
mA
mJ
mJ
nA
nC
nC
ns
ns
pF
ns
V
S
V
A