GA75TS120UPBF Vishay, GA75TS120UPBF Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
GA75TS120UPBF
Manufacturer Part Number
GA75TS120UPBF
Description
TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2kV V(BR)CES,75A I(C)
Manufacturer
Vishay
Datasheet
1.GA75TS120UPBF.pdf
(8 pages)
Specifications of GA75TS120UPBF
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
110 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
INT-A-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GA75TS120UPBF
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
GA75TS120UPBF
Quantity:
57
Document Number: 94427
Revision: 03-May-10
1000
1000
100
100
10
10
1
1
0.5
4.0
V
500 µs pulse width
V
Fig. 3 - Typical Transfer Characteristics
GE
Fig. 2 - Typical Output Characteristics
V
500 µs pulse width
CE
4.5
80
70
60
50
40
30
20
10
GE
V
= 20 V
0
1.0
GE
125 °C
- Collector to Emitter Voltage (V)
0.1
= 15 V
125 °C
- Gate to Emitter Voltage (V)
5.0
Square wave:
1.5
5.5
60 % of rated
Ideal diodes
I
2.0
6.0
voltage
25 °C
6.5
25 °C
2.5
For technical questions, contact:
7.0
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
3.0
7.5
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
1
8.0
3.5
f - Frequency (kHz)
RMS
of Fundamental)
indmodules@vishay.com
160
140
120
100
3.0
2.5
2.0
1.5
80
60
40
20
0
0
Fig. 5 - Typical Collector to Emitter Voltage vs.
0
10
V
500 µs pulse width
GE
Maximum DC Collector Current (A)
Vishay High Power Products
T
= 15 V
20
30
J
Fig. 4 - Case Temperature vs.
Maximum Collector Current
- Junction Temperature (°C)
For both:
Duty cycle: 50 %
T
T
Gate drive as specified
Power dissipation = 83 W
J
sink
Junction Temperature
= 125 °C
= 90 °C
40
60
GA75TS120UPbF
60
I
C
90
DC
I
C
= 75 A
I
C
= 37 A
80
= 150 A
120
100
100
www.vishay.com
120
150
3