BLF6G22LS-180RN:11 NXP Semiconductors, BLF6G22LS-180RN:11 Datasheet - Page 3

• Manufacturer Part Number: BLF6G22LS-180RN:11
• Description: BLF6G22LS-180RN/LDMOST/REEL13/
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-180RN:11

• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 30V
• Power - Output: 40W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062734118

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G22-180RN_22LS-180RN_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR = 7 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G22-180RN and BLF6G22LS-180RN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
RL
IMD3
ACPR
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
rs
p
= 25 C unless otherwise specified.
in
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
input return loss
drain efficiency
third order intermodulation distortion
adjacent channel power ratio
Thermal characteristics
Characteristics
Application information
Parameter
thermal resistance from
junction to case
DS
= 30 V; I
DS
Rev. 01 — 20 November 2008
= 30 V; I
1
= 2112.5 MHz; f
Dq
= 1400 mA; P
Dq
= 1400 mA; T
Conditions
T
P
case
L
2
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 40 W
= 2122.5 MHz; f
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
L
= 9.45 A
= 80 C;
= 180 W (CW); f = 2170 MHz.
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 13 V; V
= V
= 0 V; V
case
BLF6G22(LS)-180RN
GS(th)
GS(th)
Conditions
P
P
P
P
P
= 25 C; unless otherwise specified; in a
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
D
DS
DS
D
D
D
= 0.9 mA
+ 3.75 V;
+ 3.75 V;
DS
= 270 mA
= 1.62 A
= 13.5 A
Type
BLF6G22-180RN
BLF6G22LS-180RN
= 28 V
= 30 V;
= 40 W
= 40 W
= 40 W
= 40 W
= 40 W
3
= 0 V
= 2157.5 MHz; f
Power LDMOS transistor
Min
65
1.4
1.5
-
40
-
-
-
-
Min
-
15.0
-
22
-
-
4
Typ
-
2.0
2.0
-
45
-
19.5
0.06
3.3
= 2167.5 MHz;
© NXP B.V. 2008. All rights reserved.
Typ Max
40
16.0 -
25
11
38
42
Typ
0.50
0.37
-
-
Max
-
2.4
2.5
5
-
450
-
-
-
8
34.5
39
Unit
K/W
K/W
3 of 11
Unit
W
dB
dB
%
dBc
dBc
Unit
V
V
V
A
nA
S
pF
A