BLF6G10LS-135RN:11 NXP Semiconductors, BLF6G10LS-135RN:11 Datasheet - Page 3

• Manufacturer Part Number: BLF6G10LS-135RN:11
• Description: BLF6G10LS-135RN/LDMOST/TUBE-BU
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135RN:11

• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063207112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G10-135RN_10LS-135RN_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G10-135RN and BLF6G10LS-135RN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol Parameter
R
Symbol
V
V
V
I
I
I
g
R
C
Symbol
P
G
RL
ACPR
η
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
rs
p
= 25
in
°
C unless otherwise specified.
thermal resistance from
junction to case
Parameter
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Thermal characteristics
Characteristics
Application information
DS
= 28 V; I
DS
= 28 V; I
1
Rev. 02 — 21 January 2010
= 871.5 MHz; f
Dq
= 950 mA; P
Dq
= 950 mA; T
Conditions
T
case
2
= 876.5 MHz; f
= 80 °C; P
L
= 135 W; f = 894 MHz.
Conditions
V
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
Conditions
P
P
P
P
D
case
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
L(AV)
L(AV)
L(AV)
L(AV)
= 6.3 A
BLF6G10(LS)-135RN
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 25
L
= 26.5 W
= 26.5 W
= 26.5 W
= 26.5 W
= 25 W
GS(th)
GS(th)
°
3
C; unless otherwise specified; in a
D
= 886.5 MHz; f
DS
DS
D
D
D
= 0.8 mA
+ 3.75 V;
DS
+ 3.75 V;
= 180 mA
= 950 mA
= 9 A
= 28 V
= 28 V;
= 0 V
Type
BLF6G10-135RN
BLF6G10LS-135RN 0.56 K/W
Min
-
20.0
-
26.0
-
Power LDMOS transistor
4
= 891.5 MHz;
Min Typ Max Unit
65
1.4
1.6
-
24
-
7
-
-
Typ
26.5
21.0
−10.0
28.0
−39
© NXP B.V. 2010. All rights reserved.
-
1.9
2.1
-
32
-
13
0.1
2.0
Max
-
-
−6.5
-
−36.5
-
2.4
2.6
3
-
300
-
-
-
Typ Unit
0.68 K/W
Unit
W
dB
dB
%
dBc
3 of 11
V
V
V
μA
A
nA
S
Ω
pF