BLF6G10LS-135RN:11 NXP Semiconductors, BLF6G10LS-135RN:11 Datasheet - Page 2

• Manufacturer Part Number: BLF6G10LS-135RN:11
• Description: BLF6G10LS-135RN/LDMOST/TUBE-BU
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135RN:11

• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063207112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G10-135RN_10LS-135RN_2
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G10-135RN (SOT502A)
1
2
3
BLF6G10LS-135RN (SOT502B)
1
2
3
Type number
BLF6G10-135RN
BLF6G10LS-135RN
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 700 MHz to 1000 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
Package
Name Description
-
-
Rev. 02 — 21 January 2010
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
BLF6G10(LS)-135RN
[1]
[1]
Simplified outline
1
2
1
2
3
Power LDMOS transistor
3
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
2
Max
65
+13
32
+150
225
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 11
Unit
V
V
A
°C
°C